2SB860

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB860 DESCRIPTION ・With TO-220C package ・Complement to type 2SD1137 APPLICATIONS ・Low frequency power amplifier TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -45~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -4 -4 -5 1.8 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB860 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; RBE=∞ IE=-1mA; IC=0 IC=-1 A;IB=-0.1 A VCE=-80V; RBE=∞ VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 -1.0 -100 -50 250 350 TYP. MAX UNIT V V V Α Α 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB860 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB860 4