2SB863

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SD1148 APPLICATIONS ・Power amplifier applications ・Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5.0A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IC=0;f=1MHz ; VCB=-10V 55 25 15 400 MIN -140 -0.60 -0.96 TYP. 2SB863 MAX UNIT V -2.0 -1.5 -5.0 -5.0 160 V V μA μA MHz pF hFE-1 Classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB863 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 4