2SB867

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB867 DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD959 ・Excellent linearity of hFE APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -130 -80 -7 -3 -6 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ;IE=0 IC=-2A; IB=-0.1A IC=-2A; IB=-0.1A VCB=-100V;IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-2V IC=-0.5A ; VCE=-10V 45 60 30 MIN -80 TYP. 2SB867 MAX UNIT V -0.5 -1.5 -10 -50 V V μA μA 260 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-0.5A IB1=-IB2=-50mA 0.3 1.1 0.3 μs μs μs hFE-2 classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB867 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB867 4 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB867 5