2SB870

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB870 DESCRIPTION ・With TO-220C package ・Complement to type 2SD866 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -7 -15 40 150 -50~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB870 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.25A -1.5 V μA μA ICBO Collector cut-off current VCB=-100V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -50 hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 60 260 fT Transition frequency IC=-0.5A ; VCE=-10V 30 MHz Switching times μs μs μs ton Turn-on time 0.1 tstg Storage time IC=-3A ; IB1=-IB2=-0.3A 0.8 tf Fall time 0.1 hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB870 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3