2SB871

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB871 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature -20 A PC 40 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB871 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -0.33A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -0.33A -1.5 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.1A; VCE= -2V 45 hFE-2 DC Current Gain IC= -3A; VCE= -2V 60 260 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 400 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 100 MHz Switching Times ton Turn-On Time 0.1 μs ts Storage Time IC= -3A; IB1= -IB2= -0.1A 0.5 μs tf Fall Time 0.1 μs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2