2SB880

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB880 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range 1.75 150 -55~150 ℃ ℃ VALUE -70 -60 -6 -4 -6 30 W UNIT V V V A A isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA, RBE= ∞ MIN TYP. 2SB880 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -70 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA B -1.5 V Base-Emitter Saturation Voltage IC= -2A, IB= -4mA B -2.0 V μA Collector Cutoff Current VCB= -40V, IE= 0 -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A; VCE= -2V 2000 fT Current-Gain—Bandwidth Product IC= -2A; VCE= -5V 20 MHz Switching times μs μs μs ton tstg tf Turn-on Time RL= 10Ω, VCC≈ -20V IC= -2A; IB1= -IB2= -4mA 0.5 Storage Time 1.4 Fall Time 1.2 isc Website：www.iscsemi.cn