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2SB884

2SB884

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SB884 - isc Silicon PNP Darlington Power Transistor - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SB884 数据手册
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB884 DESCRIPTION ·High DC Current Gain: hFE = 1500(Min)@ IC= -1.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD1194 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range 1.75 150 -55~150 ℃ ℃ VALUE -110 -100 -6 -3 -5 30 W UNIT V V V A A isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA, RBE= ∞ MIN TYP. 2SB884 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -110 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -1.5A, IB= -3mA B -1.5 V Base-Emitter Saturation Voltage IC= -1.5A, IB= -3mA B -2.0 V μA Collector Cutoff Current VCB= -80V, IE= 0 -100 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -1.5A; VCE= -3V 1500 fT Current-Gain—Bandwidth Product IC= -1.5A; VCE= -5V 20 MHz Switching times μs μs μs ton tstg tf Turn-on Time RL= 50Ω, VCC≈ -50V IC= -1A; IB1= -IB2= -2mA 0.8 Storage Time 2.4 Fall Time 1.2 isc Website:www.iscsemi.cn
2SB884 价格&库存

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    •  国内价格
    • 5+ 13.8 5+ 0
    • 1000+ 9.2 1000+ 0

    库存:2207