INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB884
DESCRIPTION ·High DC Current Gain: hFE = 1500(Min)@ IC= -1.5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD1194
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range 1.75 150 -55~150 ℃ ℃ VALUE -110 -100 -6 -3 -5 30 W UNIT V V V A A
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -50mA, RBE= ∞ MIN TYP.
2SB884
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
-100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
-110
V
VCE(sat) VBE(sat) ICBO
Collector-Emitter Saturation Voltage
IC= -1.5A, IB= -3mA
B
-1.5
V
Base-Emitter Saturation Voltage
IC= -1.5A, IB= -3mA
B
-2.0
V μA
Collector Cutoff Current
VCB= -80V, IE= 0
-100
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-3
mA
hFE
DC Current Gain
IC= -1.5A; VCE= -3V
1500
fT
Current-Gain—Bandwidth Product
IC= -1.5A; VCE= -5V
20
MHz
Switching times μs μs μs
ton tstg tf
Turn-on Time RL= 50Ω, VCC≈ -50V IC= -1A; IB1= -IB2= -2mA
0.8
Storage Time
2.4
Fall Time
1.2
isc Website:www.iscsemi.cn
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