2SB885

Inchange Semiconductor Product Specification Silicon PNP Power Transistor 2SB885 DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1195 APPLICATIONS ・For motor drivers,printer hammer drivers,relay drivers,voltage regulator control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 1.75 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -5 -8 35 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistor CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=-50mA, RBE=∞ MIN TYP. 2SB885 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA, IE=0 -110 V VCEsat Collector-emitter saturation voltage IC=-2.5A ,IB=-5mA -1.5 V VBE sat Base-emitter saturation voltage IC=-2.5A ,IB=-5mA -2.0 V ICBO Collector cut-off current VCB=-80V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain IC=-2.5A ; VCE=-3V 1500 fT Transition frequency VCE=-5V, IC=-2.5A 20 MHz Switching times μs μs μs ton Turn-on time IC=-2A ; VCC=-50V IB1=-IB2=-4mA;RL=25Ω 0.7 tstg Storage time 1.3 tf Turn-off time 1.5 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistor PACKAGE OUTLINE 2SB885 Fig.2 Outline dimensions 3