2SB886

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2SD1196 ・DARLINGTON ・High DC current gain ・High current capacity and wide ASO ・Low saturation voltage APPLICATIONS ・Motor drivers, printer ・Hammer drivers ・Relay drivers, ・Voltage regulator control. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB886 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -110 -100 -6 -8 -12 40 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO fT hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Transition frequency DC current gain CONDITIONS IC=-50mA; RBE=∞ IC=-5mA; IE=0 IC=-4A; IB=-8mA IC=-4A; IB=-8mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-4A ; VCE=-5V IC=-4A ; VCE=-3V 1500 20 4000 MIN -100 -110 -1.0 TYP. 2SB886 MAX UNIT V V -1.5 -2.0 -0.1 -3.0 V V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-4A;IB1=-IB2=-8mA RL=12.5Ω,Duty cycle≤1% VCC=50V 0.7 1.4 1.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB886 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3