2SB887

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Motor drivers, printer ・Hammer drivers ・Relay drivers, ・Voltage regulator control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SB887 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -110 -100 -6 -10 -15 70 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB887 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;RBE=∞ IC=-5mA ;IE=0 IC=-5A; IB=-10mA IC=-5A; IB=-10mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-3V IC=-5A ; VCE=-5V 1500 4000 20 MHz MIN -100 -110 -1.0 -1.5 -2.0 -0.1 -3.0 TYP. MAX UNIT V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB887 Fig.2 outline dimensions 3