2SB896

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB896 2SB896A DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB896 VCBO Collector-base voltage 2SB896A 2SB896 VCEO Collector-emitter voltage 2SB896A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -40 -5 -10 -15 35 150 -50~150 V A A W ℃ ℃ Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB896 IC=-10mA; IB=0 2SB896A VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB896 2SB896A IEBO hFE-1 hFE-2 Cob fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=-7A; IB=-0.23A IC=-7A; IB=-0.23A VCB=-40V; IE=0 CONDITIONS 2SB896 2SB896A MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.6 -1.5 V V ICBO Collector cut-off current -50 VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 45 60 200 150 260 -50 μA μA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A ; IB1=-IB2=-66mA 0.1 0.5 0.1 μs μs μs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB896 2SB896A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3