2SB903

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. ・High-speed switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION 2SB903 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -60 -30 -6 -12 -20 1.75 PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB903 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-offcurrent Emitter cut-offcurrent DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ; IE=0 IC=-1mA ;RBE=∞ IE=-1mA ; IC=0 IC=-5A, IB=-0.25A VCB=-40V;IE=0 VEB=-4V;IC=0 IC=-1A ; VCE=-2V IC=-6A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 120 MHz MIN -60 -30 -6 -0.5 -0.1 -0.1 280 TYP MAX UNIT V V V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5A ;IB1=-IB2=-0.5A; VCC=-10V;RL=2Ω 0.10 0.30 0.03 μs μs μs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB903 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB903 4