2SB904

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB904 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1213 ·Low collector saturation voltage ·Large current capacity APPLICATIONS ·Large current switching of relay drivers, high-speed inverters,converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -30 -6 -20 -30 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=∞ IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-8A; IB=-0.4A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-10A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 120 MIN -30 -60 -6 -0.25 TYP. 2SB904 MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-10A ;IB1=-IB2=-0.5A VCC=-10V;RL=1Ω 0.3 0.3 0.02 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB904 Fig.2 outline dimensions 3