2SB919

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB919 DESCRIPTION ・With TO-220C package ・Complement to type 2SD1235 ・Low collector saturation voltage ・Large current capacity APPLICATIONS ・Large current switching of relay drivers, high-speed inverters,converters PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -30 -6 -8 -15 1.75 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA; RBE=∞ IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-3A; IB=-0.15A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 120 MIN -30 -60 -6 TYP. 2SB919 MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Turn-off time IC=-4A ; VCC=-10V IB1=-IB2=-0.2A;RL=2.5Ω 0.1 0.2 0.03 μs μs μs hFE-1Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB919 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB919 4