2SB922

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB922 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Complement to Type 2SD1238 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature -20 A PC 80 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -1mA; RBE= ∞ IC= -1mA; IE= 0 IE= -1mA; IC= 0 IC= -6A; IB= -0.6A B 2SB922 MIN -80 -120 -6 TYP. MAX UNIT V V V -0.5 -0.1 -0.1 70 30 20 280 V mA mA VCB= -80V; IE= 0 VEB= -4V; IC= 0 IC= -1A; VCE= -2V IC= -6A; VCE= -2V IC= -1A; VCE= -5V MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time RL= 10Ω, VCC= -50V IC= -5A; IB1= -IB2= -0.5A 0.2 0.7 0.1 μs μs μs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 isc Website：www.iscsemi.cn 2