2SB925

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB925 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching APPLICATIONS ·Designed for low voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature -12 A PC 30 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= -10mA; IB= 0 IC= -5A; IB= -0.16A B 2SB925 MIN -20 TYP. MAX UNIT V -0.6 -1.5 -50 -50 45 60 140 150 260 V V μA μA IC= -5A; IB= -0.16A B VCB= -40V; IE= 0 VEB= -5V; IC= 0 IC= -0.1A; VCE= -2V IC= -2A; VCE= -2V IE= 0; VCB= -10V; f= 1MHz IC= -0.5A; VCE= -10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time VCC= -20V;IC= -2A; IB1= -IB2= -66mA 0.1 0.5 0.1 μs μs μs hFE-2 Classifications R 60-120 Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2