2SB940

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1264/1264A ・High collector to emitter voltage VCEO ・Large collector power dissipation PC APPLICATIONS ・For power amplification ・For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB940 VCBO Collector-base voltage 2SB940A 2SB940 VCEO Collector-emitter voltage 2SB940A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open collector Open base -180 -6 -2 -3 2 W V A A Open emitter -200 -150 V CONDITIONS VALUE -200 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB940 V(BR)CEO Collector-emitter breakdown voltage 2SB940A V(BR)CBO V(BR)EBO VCEsat VBE IEBO ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency IC=-50μA ,IE=0 IC=-500μA ,IC=0 IC=-0.5A, IB=-50mA IC=-0.4A ; VCE=-10V VEB=-4V; IC=0 VCB=-200V; IE=0 IC=-0.15A ; VCE=-10V IC=-0.4A ; VCE=-10V IC=-0.5A; VCE=-10V,f=10MHz IC=-5mA ,IB=0 CONDITIONS 2SB940,2SB940A MIN -150 TYP. MAX UNIT V -180 -200 -6 -1.0 -1.0 -50 -50 60 50 30 MHz 240 V V V V μA μA hFE-1 Classifications Q 60-140 P 100-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB940,2SB940A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB940,2SB940A 4