2SB941

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941 2SB941A DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB941 VCBO Collector-base voltage 2SB941A 2SB941 VCEO Collector-emitter voltage 2SB941A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 35 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB941 IC=-30mA ,IB=0 2SB941A IC=-3A, IB=-0.375A IC=-3A ; VCE=-4V VEB=-5V; IC=0 2SB941 2SB941A 2SB941 2SB941A VCE=-30V; IB=0 CONDITIONS 2SB941 2SB941A MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.2 -1.8 -1 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current ICEO Collector cut-off current -0.3 VCE=-60V; IB=0 VCE=-60V; VBE=0 -0.2 VCE=-80V; VBE=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=0.5A; VCE=-10V,f=10MHz 70 10 30 250 mA ICES Collector cut-off current mA hFE-1 hFE-2 fT DC current gain DC current gain Transition frequency MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1A IB1=-0.1A ,IB2=0.1A 0.5 1.2 0.3 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB941 2SB941A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB941,2SB941A 4