2SB944

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB944 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ -8 A 35 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -10mA ; IB= 0 IC= -3A; IB= -0.15A B 2SB944 MIN -80 TYP. MAX UNIT V -0.5 -1.5 -10 -50 45 60 30 260 V V μA μA IC= -3A; IB= -0.15A B VCB= -100V; IE= 0 VEB= -5V; IC= 0 IC= -0.1A; VCE= -2V IC= -1A; VCE= -2V IC= -0.5A; VCE= -10V; f= 10MHz MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -1A ; IB1= -IB2= -0.1A 0.15 0.8 0.15 μs μs μs hFE-2 classifications Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2