INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB945
DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270
APPLICATIONS ·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak Collector Power Dissipation @ Ta=25℃
-10
A
2 W
PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -10mA ; IB= 0 IC= -4A; IB= -0.2A
B
2SB945
MIN -80
TYP.
MAX
UNIT V
-0.5 -1.5 -10 -50 45 90 30 260
V V μA μA
IC= -4A; IB= -0.2A
B
VCB= -100V ; IE= 0 VEB= -5V ; IC= 0 IC= -0.1A ; VCE= -2V IC= -2A ; VCE= -2V IC=-0.5A; VCE= -10V;ftest=10MHz
MHz
Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -2.0A ,IB1= -IB2= -0.2A, 0.13 0.5 0.13 μs μs μs
hFE-2 Classifications Q 90-180 P 130-260
isc Website:www.iscsemi.cn
2
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB945
isc Website:www.iscsemi.cn
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