2SB946

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB946 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -15 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -10mA ; IB= 0 IC= -5A; IB= -0.25A B 2SB946 MIN -80 TYP. MAX UNIT V -0.5 -1.5 -10 -50 45 90 30 260 V V μA μA IC= -5A; IB= -0.25A B VCB= -100V ; IE= 0 VEB= -5V ; IC=0 IC= -0.1A ; VCE= -2V IC= -3A ; VCE= -2V IC=-0.5A; VCE= -10V;ftest=10MHz MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3.0A ,IB1= -IB2= -0.3A, 0.5 1.5 0.1 μs μs μs hFE-2 Classifications Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB946 isc Website：www.iscsemi.cn