2SB947

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB947 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.6V(Max)@IC= -7A ·High Speed Switching APPLICATIONS ·Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ -15 A 2 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= -10mA; IB= 0 IC= -7A; IB= -0.23A B 2SB947 MIN -20 TYP. MAX UNIT V -0.6 -1.5 -50 -50 45 90 150 260 V V μA μA IC= -7A; IB= -0.23A B VCB= -40V; IE= 0 VEB= -5V; IC= 0 IC= -0.1A; VCE= -2V IC= -2A; VCE= -2V IC=-0.5A; VCE= -10V; ftest=10MHz MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -2A, IB1= -IB2= -66mA 0.1 0.5 0.1 μs μs μs hFE-1 Classifications Q 90-180 P 130-260 isc Website：www.iscsemi.cn 2