2SB954

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage APPLICATIONS ・For power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SB954 VCBO Collector-base voltage 2SB954A 2SB954 VCEO Collector-emitter voltage 2SB954A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open collector Open base -80 -5 -1 -2 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT 1 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SB954 IC=-30mA ;IB=0 2SB954A IC=-1.0A ;IB=-0.125A IC=-1A ; VCE=-4V 2SB954 2SB954A 2SB954 2SB954A VCE=-30V; IB=0 CONDITIONS 2SB954 2SB954A MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.0 -1.3 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage ICEO Collector cut-off current -300 VCE=-60V; IB=0 VCE=-60V; VBE=0 -200 VCE=-80V; VBE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.2A; VCE=-5V,f=10MHz 70 15 30 0.5 IC=-1A ;VCC=-50V IB1=-0.1A, IB2=0.1A 1.2 0.3 -1 250 μA ICES Collector cut-off current μA IEBO hFE-1 hFE-2 fT ton ts tf Emitter cut-off current DC current gain DC current gain Transition frequency Trun-on time Storage time Fall time mA MHz μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB954 2SB954A Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A 4