2SB965

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB965 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -7 70 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB965 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A B -1.5 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A B -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-5V 60 320 hFE -2 DC current gain IC=-4A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 150 pF fT Transition frequency IC=-1A ; VCE=-5V 75 MHz hFE-1 classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB965 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3