2SB975

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB975 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-DC Collector Power Dissipation TC=25℃ VALUE -150 -100 -7 -8 -12 -0.8 40 UNIT V V V A A A PC W Collector Power Dissipation Ta=25℃ Junction Temperature Storage Temperature Range 1.5 150 -55~150 ℃ ℃ Tj Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB975 MAX UNIT VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= -3A, IB= -3mA B -1.5 V Base-Emitter Saturation Voltage IC= -3A, IB= -3mA B -2.0 V μA Collector Cutoff Current VCB= -100V, IE= 0 -1.0 IEBO hFE-1 Emitter Cutoff Current VEB= -7V; IC= 0 IC= -3A; VCE= -2V 2000 -5 mA DC Current Gain 15000 hFE-2 DC Current Gain IC= -5A; VCE= -2V 500 Switching times μs μs μs ton tstg tf Turn-on Time RL= 16.7Ω, VCC≈ -50V IC= -3A; IB1= -IB2= -3mA 0.5 Storage Time 1.0 Fall Time 1.0 hFE-1 Classifications M 2000-5000 L 3000-7000 K 5000-15000 isc Website：www.iscsemi.cn