2SB980

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB980 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ -10 A 70 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB980 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -2.0 V VBE(on) Base -Emitter On Voltage IC= -4A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -4A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz 20 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 150 pF hFE-2Classifications Q 60-120 S 80-160 P 100-200 isc Website：www.iscsemi.cn 2