2SB988

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB988 DESCRIPTION ・With TO-220C package ・Low collector saturation voltage APPLICATIONS ・For vertical output and general purpose applicaitons PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -7 -3 -0.5 30 150 -50~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-30mA; IB=0 IC=-3A; IB=-0.3A IC=-0.5A ; VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 60 20 150 9 MIN -60 TYP. 2SB988 MAX UNIT V -1.0 -1.0 -0.1 -0.1 200 V V mA mA pF MHz hFE-1 Classifications O 60-120 Y 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB988 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3