2SB992

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB992 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max)@ IC= -4A ·Complement to Type 2SD1362 APPLICATIONS ·High current switching applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature Storage Temperature VALUE -100 -80 -5 -7 -1 1.5 W 40 150 -55~150 ℃ ℃ UNIT V V V A A PC isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB992 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.4 V μA μA Collector Cutoff Current VCB= -100V ; IE= 0 VEB= -5V; IC= 0 -5 Emitter Cutoff Current -5 hFE-1 DC Current Gain IC= -1A; VCE= -1V 70 240 hFE-2 DC Current Gain IC= -4A; VCE= -1V 30 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz IC= -1A; VCE= -4V 250 pF fT Current-Gain—Bandwidth Product 10 MHz Switching Times ton tstg tf Turn-on Time VCC= -30V, RL= 10Ω, IB1= -IB2= -0.3A, 0.4 μs μs μs Storage Time 2.5 Fall Time 0.5 hFE-1 Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2