2SB994

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB994 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Collector Power Dissipation: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ IC= -3A ·Complement to Type 2SD1354 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature Storage Temperature VALUE -60 -60 -7 -3 -0.5 1.5 W 30 150 -55~150 ℃ ℃ UNIT V V V A A PC isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB994 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -60 V VCE(sat) VBE(on) ICBO IEBO Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.0 V Base-Emitter On Voltage IC= -0.5A; VCE= -5V -1.0 V μA μA Collector Cutoff Current VCB= -60V; IE= 0 VEB= -7V; IC= 0 -100 Emitter Cutoff Current -100 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 60 200 hFE-2 DC Current Gain IC= -3A; VCE= -5V 20 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz IC= -0.5A; VCE= -5V 150 pF fT Current-Gain—Bandwidth Product 9 MHz Switching Times ton tstg tf Turn-on Time VCC= -30V, RL= 15Ω, IB1= -IB2= -0.2A, 0.4 μs μs μs Storage Time 1.7 Fall Time 0.5 hFE-1 Classifications O 60-120 Y 100-200 isc Website：www.iscsemi.cn 2