2SB995

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB995 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ IC= -4A ·Complement to Type 2SD1355 APPLICATIONS ·Power amplifier applications. ·Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature -0.5 A PC 40 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB995 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -100 V VCE(sat) VBE(on) ICBO IEBO Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -2.0 V Base-Emitter On Voltage IC= -4A; VCE= -5V -1.5 V μA Collector Cutoff Current VCB= -100V; IE= 0 VEB= -5V; IC= 0 -100 Emitter Cutoff Current -1.0 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 240 hFE-2 DC Current Gain IC= -4A; VCE= -5V 20 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz IC= -1A; VCE= -5V 270 pF fT Current-Gain—Bandwidth Product 5 MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2