2SC1004

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1004 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1100 700 5 0.5 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1004 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 700 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=150m A;IB=30mA 5.0 V VBEsat Base-emitter saturation voltage IC=150m A;IB=30mA 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 μA IEBO Emitter cut-off current VEB=4V;IC=0 10 μA hFE DC current gain IC=150m A ; VCE=15V 30 160 fT Transition frequency IC=150m A ; VCE=15V 2.0 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1004 Fig.2 Outline dimensions 3