2SC1034

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1034 DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·For horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open collector VALUE 1100 13 1 25 150 -65~150 UNIT V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1034 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=10mA; IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=5mA; IC=0 13 V VCEsat Collector-emitter saturation voltage IC=750mA; IB=75m A 5.0 V VBEsat Base-emitter saturation voltage IC=750mA; IB=75m A 1.4 V VCB=50V;IE=0 ICBO Collector cut-off current VCB=800V;IE=0 0.2 mA 5.0 IEBO Emitter cut-off current VEB=8V; IC=0 4 mA hFE DC current gain IC=750mA ; VCE=3V 4 40 fT Transition frequency IE=-0.2A ; VCE=10V 5 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1034 Fig.2 outline dimensions 3