2SC1046

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1046 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For CRT horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1000 400 6 3 25 125 -40~125 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1046 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0 400 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA; IE=0 IE=1mA; IC=0 1000 V Emitter-base breakdown votage 6 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.4A 2.0 V μA μA ICBO Collector cut-off current VCB=800V;IE=0 10 IEBO Emitter cut-off current VEB=5V;IC=0 10 hFE DC current gain IC=2 A ; VCE=5V 4 20 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1046 Fig.2 Outline dimensions 3