2SC1050

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1050 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For use in audio and general purpose applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 6 1 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1050 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 300 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A 1.2 V VBEsat Base-emitter saturation voltage IC=0.5A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA ICEO Collector cut-off current VCE=300V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 30 200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1050 Fig.2 Outline dimensions 3