2SC1114

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1114 DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 325 300 7 4 100 150 -65~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=325V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V 20 10 MIN 300 325 7 2SC1114 TYP. MAX UNIT V V V 0.8 1.5 100 100 V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1114 Fig.2 Outline dimensions 3