2SC1157

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 100 5 0.8 7 -40~150 -40~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=300mA IB=30m A IC=300mA IB=30m A IC=100μA;IE=0 IC=1mA; IB=0 IE=100μA; IC=0 VCB=110V; IE=0 VEB=5V; IC=0 IC=300mA ; VCE=4V IE=100mA ; VCB=10V 20 110 100 5 MIN 2SC1157 TYP. MAX 1.2 1.5 UNIT V V V V V 1.0 1.0 300 70 μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1157 Fig.2 outline dimensions 3