2SC1163

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 4 0.1 20.8 150 -65~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1163 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 IC=100μA;IE=0 IE=100μA;IC=0 300 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage 300 V Emitter-base breakdown voltage 4 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 1.0 V VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA 1.5 V μA μA ICBO Collector cut-off current VCB=200V; IE=0 10 IEBO Emitter cut-off current VEB=3V; IC=0 10 hFE DC current gain IC=50mA ; VCE=10V 30 240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1163 Fig.2 Outline dimensions 3