2SC1172

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For use in color TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 5 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1172 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=1A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=2A ; VCE=10V 10 fT Transition frequency IC=0.5A ; VCE=10V 3 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1172 Fig.2 Outline dimensions 3