2SC1185

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 300 250 5 0.7 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1185 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 250 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA; IE=0 IE=1mA; IC=0 300 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V VBEsat Base-emitter saturation voltage IC=500mA; IB=100mA 1.5 V μA μA ICBO Collector cut-off current VCB=200V;IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 10 hFE DC current gain IC=0.4A ; VCE=10V 40 200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1185 Fig.2 outline dimensions 3