2SC1195

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION ・With TO-3 package ・High power dissipation ・Low collector saturation voltage APPLICATIONS ・For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 5 2.5 100 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1195 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 200 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 200 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 30 150 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1195 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3