2SC1226

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-202) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC1226 VCBO Collector-base voltage 2SC1226A 2SC1226 VCEO Collector-emitter voltage 2SC1226A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 40 5 2 3 0.6 10 150 -55~150 V A A A W ℃ ℃ Open emitter 50 32 V CONDITIONS VALUE 40 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SC1226 IC=1mA;IE=0 2SC1226A 2SC1226 IC=10mA; IB=0 2SC1226A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=20V; IE=0 VCE=12V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0; VCB=5V;f=1MHz IE=0.5A ; VCB=5V CONDITIONS IC=2A ;IB=0.2 A IC=2A ;IB=0.2 A 2SC1226 2SC1226A MIN TYP. 0.4 MAX 1.0 1.5 UNIT V V V(BR)CBO Collector-base breakdown voltage 40 V 50 32 V 40 1 100 100 50 50 150 220 pF MHz μA μA μA V(BR)CEO Collector-emitter breakdown voltage hFE classifications P 50-100 Q 80-160 R 100-220 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1226 2SC1226A Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A 5