2SC1295

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1295 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1000 350 5 2 40 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1295 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 350 V V(BR)EBO VCEsat Emitter-base breakdown votage IE=1mA; IC=0 IC=2 A;IB=1A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V ICBO Collector cut-off current VCB=1000V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE DC current gain IC=1.5A ; VCE=5V 3 13 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1295 Fig.2 Outline dimensions 3