2SC1308

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1308 DESCRIPTION ·With TO-3 package ·High voltage ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 400 5 7 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1308 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 400 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=1mA ;IC=0 IC=6A; IB=1.2A 5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=5V 3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1308 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3