2SC1309

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1309 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV vertical deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1200 500 6 5 80 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IE=1.0mA; IC=0 IC=5 A;IB=1.2 A IC=5 A;IB=1.2 A VCB=1200V;IE=0 VEB=5V; IC=0 IC=5A ; VCE=10V 10 MIN 500 5 2SC1309 TYP. MAX UNIT V V 10 2 1.0 1.0 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1309 Fig.2 Outline dimensions 3