2SC1367

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1367 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1000 600 5 1 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=0.5 A;IB=0.1 A IC=0.5 A;IB=0.1 A VCB=1000V;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=10V IC=0.1A ; VCE=10V 30 6 MIN 600 5 2SC1367 TYP. MAX UNIT V V 5.0 1.5 0.1 0.1 120 V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1367 Fig.2 Outline dimensions 3