2SC1391

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1391 DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 7 0.1 6.5 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=50μA ;IE=0 IC=1mA ;IB=0 IE=50μA ;IC=0 IC=50mA ;IB=5mA VCB=300V;IE=0 VEB=7V; IC=0 IC=50mA ; VCE=10V IC=10mA ; VCE=20V 30 25 MIN 300 300 5 2SC1391 TYP. MAX UNIT V V V 2.0 5 5 160 V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1391 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3