2SC1419

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419 DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 50 50 5 2 3 20 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified. SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA ,IB=0 IC=1mA ,IE=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=50V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=10V 35 MIN 50 50 5 2SC1419 TYP. MAX UNIT V V V 1.0 1.5 100 100 320 5 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1419 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3