2SC1433

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1433 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage switching power amplifier applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 600 400 5 5 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1433 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 400 V V(BR)EBO Emitter-base breakdown votage IE=1.0mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1A 2.0 V ICBO Collector cut-off current VCB=600V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 20 300 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1433 Fig.2 Outline dimensions 3