2SC1445

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1445 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 6 6 1 40 150 -65~200 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICBO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IC=2A; IB=0.2A IC=6A ;IB=0.6A IC=2A; IB=0.2A IC=6A ;IB=0.6A VCB=100V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=10V 30 10 MIN 80 TYP. 2SC1445 MAX UNIT V 0.7 1.2 1.2 2.0 0.1 0.1 V V V V mA mA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1445 Fig.2 outline dimensions 3