2SC1448

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1448 DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 150 150 5 1.5 0.5 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC1448 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50m A 1.5 V μA μA ICBO Collector cut-off current VCB=150V;IE=0 20 IEBO Emitter cut-off current VEB=5V; IC=0 20 hFE DC current gain IC=0.5A ; VCE=10V 40 140 fT Transition frequency IC=0.5A ; VCE=10V 5 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1448 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3